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BLM2004NE
产品特点:
The BLM2004NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested. |
规格书下载 |
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BLM8205B
产品特点:
The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. |
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BLM8205A
产品特点:
The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. |
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BLM3401
产品特点:
The BLM3401 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. |
规格书下载 |
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BLM3400
产品特点:
The BLM3400 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application. |
规格书下载 |
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BLM2301
产品特点:
The BLM2301 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. |
规格书下载 |
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BLM2014NE
产品特点:
Enhancement Mode Power MOSFET Description design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
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规格书下载 |
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BLM2012E
产品特点:
Enhancement Mode Power MOSFET Description excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. |
规格书下载 |
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BLM2010E
产品特点:
The BLM2010E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested. |
规格书下载 |
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BLM2008E
产品特点:
The BLM2008E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested. |
规格书下载 |
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